D. S. Bhavsar
The undoped and doped Lead Iodide crystals have been grown by gel technique at room temperature. The thin films of these gel grown crystals have been grown on a glass substrate by vacuum technique. XRD of these films were recorded and compared. They are almost matching with ASTM data of Lead Iodide. Lattice constants are observed to be sensitively affected by doping. The band gaps of these films were calculated by measuring the transmittance. It is found that the energy band gap of these films goes on decreasing as the thickness of the films increased. The band gaps of the doped films were found to decrease significantly.
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